FM25L16BGTR

16Kb FRAM Serial 3V Memory, Sophisticated Write Protection Scheme, Low Power Consumption, SOP

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Price:: US $1.00~5.00 / piece [Get Latest Price]

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PartNumber:: FM25L16BGTR

Brand:: Ramtron International Corporation - RIC | Pack: SOP | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-11-29

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Part Number:FM25L16BGTR
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Product Summary

The FM25L16BGTR is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM25L16BGTR provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25L16BGTR performs write operations at bus speed. No write delays are incurred.

Parametrics

FM25L16BGTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +5.0V; (2)Voltage on any pin with respect to VSS:-1.0V to +5.0V and VIN < VDD+1.0V; (3)Storage Temperature:-55℃ to + 125℃; (4)Lead Temperature (Soldering, 10 seconds):300℃; (5)Electrostatic Discharge Voltage:Human Body Model (JEDEC Std JESD22-A114-B):4kV, Charged Device Model (JEDEC Std JESD22-C101-A):1kV; (6)Package Moisture Sensitivity Level:MSL-1.

Features

FM25L16BGTR features: (1)Organized as 2,048 x 8 bits; (2)Unlimited Read/Write Cycles; (3)45 Year Data Retention; (4)NoDelay Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 18 MHz Frequency; (7)Direct Hardware Replacement for EEPROM; (8)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (9)Hardware Protection; (10)Software Protection; (11)Low Voltage Operation 2.7 to 3.6V; (12)1 μA Standby Current; (13)Industrial Temperature -40℃ to +85℃; (14)“Green”/RoHS 8-pin SOIC Package; (15)“Green”/RoHS 8-pin TDFN Package; (16)TDFN Footprint Conforms to TSSOP-8.